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HIGH-POWER GaAlAs IR EMITTERS
OD-850F
FEATURES
? High optical output
? 850nm peak emission
? Hermetically sealed TO-46 package
? Narrow angle for long distance applications
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Caps are
welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P o
Peak Emission Wavelength, λ P
Spectral Bandwidth at 50%, Δλ
Half Intensity Beam Angle, θ
Forward Voltage, V F
Reverse Breakdown Voltage, V R
Rise Time
Fall Time
TEST CONDITIONS
I F = 100mA
I F = 20mA
I F = 20mA
I F = 20mA
I F = 100mA
I R = 10 μ A
I FP = 50mA
I FP = 50mA
MIN
22
5
TYP
30
850
40
8
1.6
30
20
20
MAX
2
UNITS
mW
nm
nm
Deg
Volts
Volts
nsec
nsec
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Power Dissipation
Continuous Forward Current
Peak Forward Current (10 μ s, 200Hz) 1
Reverse Voltage
Lead Soldering Temperature (1/16" from case for 10sec)
200mW
100mA
300mA
5V
260°C
1
Derate linearly above 25°C.
Thermal Resistance, R THJA
THERMALPARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
1
Thermal Resistance, R THJA 2
-40°C to 100°C
100°C
400°C/W Typical
135°C/W Typical
1
Heat transfer minimized by measuring in still air with minimum heat conducting through leads.
2 Air
circulating at a rapid rate to keep case temperature at 25°C.
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Revision February 26, 2013
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